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Creators/Authors contains: "Li, Chenxi"

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  1. ; ; ; ; ; ; ; ; ; ; et al (, Journal of Materials Chemistry C)
    We used temperature-dependent spark plasma sintering to induce phase transformations of metastable 3D c-BN to mixed-phase 3D/2D c-BN/h-BN and ultimately to the stable 2D h-BN phase at high temperature, useful for extreme-temperature technology. 
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  2. ; ; ; ; ; ; ; ; ; ; et al (, Physical Review Materials)
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  3. ; ; ; ; ; ; ; ; ; ; et al (, Nano Letters)
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  4. ; ; ; ; ; ; ; (, Environmental Science & Technology)
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  5. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Letters)
    Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (∼234 V) as compared to GaN (∼168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics. 
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  6. ; ; ; ; ; ; ; ; ; ; et al (, The Journal of Physical Chemistry Letters)